Gallium Nitride Device Market Top Key Players and Strategies, 2025–2027

According to Fortune Business Insights, the global gallium nitride device market size was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, at a CAGR of 5.20% during 2025–2032. North America dominated the market in 2019 with a 35.89% share, supported by early adoption and a strong semiconductor infrastructure.

The GaN device market is expanding rapidly due to rising demand for high-performance, energy-efficient semiconductor solutions. GaN technology provides key benefits such as higher power density, superior thermal efficiency, and faster switching speeds, making it highly suitable for next-generation applications including 5G networks, electric vehicles, renewable energy systems, and aerospace electronics. Increasing deployment of GaN in both power electronics and RF devices is driving market growth, while advances in GaN-on-Silicon manufacturing and packaging innovations are reducing costs and broadening accessibility. In addition, government initiatives promoting energy efficiency and the growing use of GaN in consumer electronics are further strengthening market adoption worldwide.

A list of all the prominent key players of Gallium Nitride Device Market:

• Cree, Inc. (The U.S.)
• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

Information Source:

https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367

Drivers & Restraints-

Expansion of Telecommunications Domain to Accelerate Growth

The demand for energy efficient GaN devices is surging rapidly owing to the expansion of the telecommunications domain. Most of the internet service providers are nowadays focusing on providing lower latency with optical cable wires, ubiquitous connectivity, and network with higher capacity. Apart from that, the rising utilization of GaN devices in the 5G infrastructure is likely to propel the gallium nitride device market growth in the near future. However, the high cost associated with the maintenance and development of gallium nitride devices may hinder growth.

Segmentation:

The gallium nitride device market size is segmented by device type into opto-semiconductor devices, power semiconductor devices, and RF semiconductor devices; by wafer size into 2-inch, 4-inch, and 6-inch and above wafers; and by component into transistors, diodes, rectifiers, power ICs, and others. Based on application, the market covers LiDAR, wireless and EV charging, radar and satellite radio frequency, and other uses. By end user, it includes aerospace, defense, healthcare, renewables, information and communication technology, and others. Geographically, the market is divided into North America (U.S. and Canada), Europe (U.K., Germany, France, Russia, Italy, and Rest of Europe), Asia-Pacific (China, India, Japan, Australia, South Korea, and Rest of Asia-Pacific), the Middle East (Saudi Arabia, Israel, Turkey, and Rest of the Middle East), and the Rest of the World (Africa and Latin America), with each region further segmented by device type, wafer size, component, application, and end user.

Regional Insights-

High Demand for Wireless Devices to Favor Growth in Europe

Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.

Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.

Competitive Landscape-

Key Companies Focus on Winning New Contracts to Intensify Competition

The global gallium nitride device market is highly fragmented with the presence of numerous reputed manufacturers. Most of them are focusing on achieving new contracts from significant governments, as well as private agencies to deliver their in-house products. Below are the two latest industry developments:

• In May 2021, Raytheon Technologies Corporation entered into partnership with GlobalFoundries to develop and commercialize a gallium nitride (GaN) on silicon process for 5G and 6G RF. The GaN process technology improves RF performance. It maintains operational and production costs and enables levels of power and power efficiency for 5G and 6G RF millimeter-wave operating frequency standards.
• In January 2021, Yaskawa Electric Corporation, a Japanese power electronics firm, entered into a partnership with Transphorm, a GaN-based power conversion product provider in California. Under the agreement, Yaskawa will use Transphorm’s GaN power devices for industrial power conversion applications that include variable frequency drives and servo motors.