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1 V throughout the emitter junction will ordinarily be adequate to cut off either a germanium or silicon transistor ... The particular approach to be used in establishing an operating point on the transistor attributes depends upon whether the transistor is to operate in the active, saturation or cutoff areas; on the application under factor to consider; on the thermal stability of the circuit; and on other factors ... In a fixed-bias circuit, the operating point for the circuit of illus ... a can be developed by keeping in mind that the required present I is constant, independent of the quiescent collector existing I, which is why this circuit is called the fixed-bias circuit ...
The smaller sized the value of S, the less most likely the circuit will display thermal runaway ... S, as specified here, can not be smaller sized than unity ... Other stability factors are specified in regards to dc current gain h as I/h, and in terms of base-to-emitter voltage as I/V ... However, bias circuits with little values of S will likewise perform satisfactorily for transistors that have large variations of h and V. For the fixed-bias circuit it can be shown that S = h + 1, and if h = 50, then S = 51 ... Such a big value of S makes thermal runaway a definite possibility with this circuit ...
a is gone back to the collector junction rather than to the battery terminal ... Such a connection is revealed in illus ... b. In this bias circuit, if I tends to increase (either since of an increase in temperature or due to the fact that the transistor has been replaced by another), then V decreases ... For Find More Details On This Page reduces and, as a repercussion of this lowered bias existing, the collector current is not allowed to increase as much as it would if fixed predisposition were utilized ... The stability aspect S is (1) revealed in Eq ... (1 )... This value is smaller sized than h + 1, which is the value obtained for the fixed-bias case ...
